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| 2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 30 6.5 19.5 80 375 6.5 8 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10S2B Weight: 1.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.56 Unit C/W 2 Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.1 mH, RG = 25 , IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 3 1 1 2006-11-13 2SK3879 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A Min 30 800 2.0 2.5 Typ. 1.35 5.2 1500 25 140 35 Max 10 100 4.0 1.7 pF Unit A V A V V S 10 V VGS 0V 50 RL= 114 VDD 400 V - VOUT ns Turn-on time Switching time Fall time ton 80 tf Duty < 1%, tw = 10 s = 50 nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6.5 A - 220 35 22 13 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6.5 A, VGS = 0 V IDR = 6.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1200 11.5 Max 6.5 19.5 -1.7 Unit A A V ns C Marking K3879 Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 2SK3879 5 ID - VDS COMMON SOURCE Common source Tc = 25C Tc 25C PULSE TEST Pulse test 8,10 6 5.5 10 ID - VDS COMMON Common SOURCE source Tc = 25C Ta=25 PULSE Pulse TEST 8,10 6 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 4 8 5.75 5.5 test 6 3 5.25 2 5 4 5.25 5 1 VGS=4.5V 0 0 2 4 6 DRAIN-SOURCE VOLTAGE 8 VDS (V) 10 2 VGS=4.5V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 16 Common source COMMON SOURCE V DS=20V VDS = 20test Pulse V 12 PULSE TEST ID - VGS DRAIN-SOURCE VOLTAGE VDS (V) 20 VDS - VGS COMMON SOURCE Common source Tc = 25C Ta=25 PULSE TEST DRAIN CURRENT ID (A) 16 Pulse test 12 ID=7A 8 8 3.5 4 Ta=100 -55 25 4 1.5 0 0 2 4 6 8 (V) 0 10 0 GATE-SOURCE VOLTAGE VGS 4 8 12 16 GATE-SOURCE VOLTAGE VGS (V) 20 100 FORWARD TRANSFER ADMITTANCE Yfs (S) Yfs - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) () RDS (ON) - ID 10.00 Common source COMMON SOURCE V = =10V VGS GS10 V Tc = 25C Tc=25 PULSE TEST Pulse test Common source COMMON SOURCE V DS=20V VDS = 20 V Pulse test PULSE TEST 10 -55 Ta=100 1 25 1.00 0.1 0.1 1 10 DRAIN CURRENT ID (A) 100 0.10 0.01 0.1 1 DRAIN CURRENT ID (A) 10 3 2006-11-13 2SK3879 5 DRAIN-SOURCE ON RESISTANCE RDS (ON) () RDS (ON) - Tc DRAIN REVERSE CURRENT IDR (A) 10 COMMON source Common SOURCE Tc = 25C Tc=25 PULSE TEST Pulse test IDR - VDS 4 Common source COMMON SOURCE V = =10V VGS GS10 V PULSE TEST Pulse test 7 3 3 2 ID=1.5A 1 1 3 10 VGS=0-1V 1 0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 DRAIN-SOURCE VOLTAGE VDS (V) 10000 CAPACITANCE - VDS Vth (V) 5 Vth - Tc Ciss (pF) 4 1000 Coss GATE THRESHOLD VOLTAGE CAPACITANCE C 3 2 COMMON SOURCE 100 COMMON SOURCE Common source V =0V VGS = 0 V GS f = 1 MHz f=1MHz Tc = 25C Tc=25 Crss 1 Common source V DS=10V ID = 1 mA ID=1mA PULSE TEST Pulse test VDS = 10 V 10 0.1 1 10 DRAIN-SOURCE VOLTAGE VDS (V) 100 0 -80 -40 0 40 80 120 CASE TEMPERATURE Tc (C) 160 120 PD (W) PD - Tc DRAIN-SOURCE VOLTAGE VDS (V) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 20 100 80 60 40 20 0 0 40 80 120 Tc (C) VDD=100V 300 200V 400V COMMON SOURCE Common source DRAIN POWER DISSIPATION 12 200 8 100 ID=6.5A ID = 6.5 A Tc=25 Tc = 25C 4 PULSE TEST Pulse test 0 0 0 20 40 60 160 CASE TEMPERATURE TOTAL GATE CHARGE Qg (nC) 4 2006-11-13 GATE-SOURCE VOLTAGE VGS 400 V DS 16 (V) 2SK3879 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 duty=0.5 0.1 0.1 0.05 0.02 t =t/ =1.56 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 (S) 1 10 PULSE WIDTH tw SAFE OPERATING AREA 100 EAS - Tch 400 AVALANCHE ENERGY EAS (mJ) I MAX (PULSED) * D () 100 s * 350 300 250 200 150 100 50 0 25 50 75 100 125 Tch (C) 10 ID MAX (CONTINUOUS) * () 1 ms* DRAIN CURRENT ID (A) 1 DC OPERATION Tc = 25 0.1 SINGLE NONREPETITIVE PULSE * SINGLE NONREPETITIVE Tc =PULSE Tc=25 25C Curves be derated linearly with Curves mustmust be detaed lineality with increase in increase in temperature temperature. 1 10 100 150 CHANNEL TEMPERATURE (INITIAL) 0.01 1000 DRAIN-SOURCE VOLTAGE VDS (V) 15 V -15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 VDD = 90 V, L = 16.1 mH WAVE FORM AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-13 2SK3879 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13 |
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